Strain relief and shape oscillations in site-controlled coherent SiGe islands
نویسندگان
چکیده
منابع مشابه
Interdependence of strain and shape in self-assembled coherent InAs islands on GaAs
– Self-assembled coherent InAs islands on GaAs (100) have been investigated by a novel version of grazing-incidence diffraction (“iso-strain scattering”). This method permits the determination of the interdependence of strain and shape, as well as the relaxation gradient within the InAs dots. The relaxation in the islands ranges from fully strained at the bottom to completely relaxed at the top...
متن کاملBandstructure and photoluminescence of SiGe islands with controlled Ge concentration
The dependence of the photoluminescence (PL) emission wavelength of SiGe islands embedded into a Si matrix on their Ge concentration and gradient was investigated. Intense PL signals at wavelengths that can be shifted over most of the telecom wavelength range (1.38–1.77 mm) by varying the Ge concentration were observed. Using the structural island parameters determined by AFM, TEM, and a carefu...
متن کاملStrain relaxation of SiGe islands on compliant oxide
The relaxation of patterned, compressively strained, epitaxial Si0.7Ge0.3 films transferred to borophosphorosilicate ~BPSG! glass by a wafer-bonding and etch-back technique was studied as an approach for fabricating defect-free Si12xGex relaxed films. Both the desired in-plane expansion and undesired buckling of the films concurrently contribute to the relaxation. Their relative role in the rel...
متن کاملStrain-Controlled Valley Splitting in Si-SiGe Heterostructures
A splitting between equivalent valleys larger than the spin splitting was recently reported in a gate confined electron system in thin Si films grown on SiGe substrate [1]. This degeneracy lifting reduces scattering and improves the coherence time. The valley splitting larger than the spin splitting opens a way to build spin qubits, which makes silicon-based quantum devices promising for future...
متن کاملState-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot
D. R. Ward, 2, ∗ Dohun Kim, 3, ∗ D. E. Savage, M. G. Lagally, R. H. Foote, Mark Friesen, S. N. Coppersmith, and M. A. Eriksson Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, USA Sandia National Laboratories, Albuquerque, NM 87185, USA Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea Department of Materials Science and Eng...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nanotechnology
سال: 2013
ISSN: 0957-4484,1361-6528
DOI: 10.1088/0957-4484/24/33/335707